YVO_4晶体的高效受激拉曼散射

Efficient Stimulated Raman Scattering of YVO_4 Crystal

报道了YVO4晶体在532 nm、30 ps脉冲下的的高效受激拉曼散射。采用腔外单次通过方式测量了不同长度YVO4晶体1阶斯托克斯受激拉曼散射的阈值,并得到该晶体的稳态增益系数为16.0±0.5 cm/GW。实验中观察到2阶斯托克斯线(558.6 nm5、87.8 nm)和1阶反斯托克斯线(508.0 nm),受激拉曼散射的整体转换效率高于50%。

The stimulated Raman scattering （SRS） of 532 nm, 30 ps pulse was investigated in YVO4 crystal samples. In an external single-pass configuration, the SRS thresholds for the first Stokes line were measured for different crystal lengths, and the steady-state gain coefficient was calculated to be 16.0±0. 5 cm/GW. In this experiment, the second Stokes line （558.6 nm, 587.8 nm） as well as the first anti-Stokes line （508.0 nm） was also observed. The total conversion efficiency of SRS was higher than 50%.