SiC抛光片表面氧化行为的XPSS、EM研究

Study on the oxidation on surfaces of the polished SiC wafer by SEM XPS

本文利用扫描电子显微镜和X光电子能谱研究SiC抛光片表面氧化行为,发现Si面比C面的氧化更显著,产生更多的氧化产物,提出利用扫描电子显微镜和X光电子能谱来鉴别SiC晶片的Si面和C面的新方法。

The oxidation on surfaces of the polished SiC wafer was studied by SEM and XPS. It is found that the oxidation and the oxidation production on the silicon surface are more than those on the carbon surface. The identification of the silicon sur face and carbon surface of SiC wafer using SEM or XPS was proposed.