摘要
About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.
About φ45 mm LiAlO2 single crystal was grown by Czochralski （Cz） technique. However, the full-width at half-maximum （FWHM） value was high to 116.9 arcsec. After three vapor transport equilibration （VTE） processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition （PLD）. It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.
