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一种基于新型寄存器结构的逐次逼近A/D转换器 被引量:3

A Successive Approximation Analog-to-Digital Converter Based on a New Register Architecture
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摘要 介绍了一种10位CMOS逐次逼近型A/D转换器。在25kSPS采样频率以下,根据模拟输入端输入的0~10V模拟信号,通过逐次逼近逻辑,将其转化为10位无极性数字码。转换器的SAR寄存器结构采用了一种新的结构来实现D触发器。该转换器采用3μmCMOS工艺制作,信噪比为49dB,积分非线性为±0.5LSB。 A 10-bit CMOS successive approximation A/D converter is presented. With successive approximation logic, this A/D converter can convert 0 -10 V analog signals into 10-bit nonpolarity digital code at 25 kSPS sampling rate. And a novel structure is adopted for D-type flip-flop in successive approximation register (SAR). Fabricated in 3 μm CMOS process, the A/D converter has a signal-to-noise ratio (SNR) of 49 dB, and an integral nonlinearity of ± 0.5 LSB.
出处 《微电子学》 CAS CSCD 北大核心 2006年第3期337-339,343,共4页 Microelectronics
关键词 A/D转换器 逐次逼近 寄存器 A/D converter Successive approximation Register
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参考文献6

  • 1Lin C-S, Liu B-D. A new successive approximation architecture for low cost A/D converte [J]. IEEE J Sol Sta Circ, 2003,38(1) :54-62.
  • 2Mortezapour S, Lee E K F. A 1-Ⅴ, 8-bit successive approximation ADC in standard CMOS process [J].IEEE J Sol Sta Circ,2000,35(4):642-646.
  • 3Yuan J-R, Svensson C. A 10-bit 5-MS/s successive approximation ADC cell used in a 70 MS/s ADC array in 1.2 μm CMOS [J]. IEEE J Sol Sta Circ, 1994,29(8) :866-872.
  • 4Rossi A, Fucili G. Nonredundant successive approximation register for A/D in standard CMDS process [J].Elee Lett, 1996,3(12):157-166.
  • 5Keon M. High performance analog to digital converter architectures [A]. Proc Bipolar Circuit and Technology Meeting [C]. California, USA. 1989. 35-43.
  • 6Shu T-H, Bacrania K,Gokhale R. A 10-b 40-Msample/s BiCMOS A/D converter [J]. IEEE J Sol Sta Circ,1996,31(10) : 1507-1510.

同被引文献25

  • 1季红兵.基于CMOS工艺的10位逐次逼近型模数转换器设计分析[J].盐城工学院学报(自然科学版),2006,19(4):42-45. 被引量:1
  • 2孙彤,李冬梅.一种0.2-mV 20-MHz 600-μW比较器[J].微电子学,2007,37(2):270-273. 被引量:9
  • 3Chen Yanfei, Tsukamoto S, Kuroda T. A 9b 100MS/s 1.46mW SAR ADC in 65nm CMOS [ C ]//Solid-State Circuits Confer- ence, 2009. IEEE Asian , 2009(16- 18):145- 148.
  • 4Lin Ying-Zu, Liu Chun-Cheng, Huang Guan-Ying, et al. A 9-bit 150-MS/s 1.53-mW subranged SAR ADC in 90-nm CMOS [ C ]// VLSI Circuits( VLSIC), 2010 IEEE Symposium on, 2010 ( 16 - 18 ) :243 - 244.
  • 5孙彤,李冬梅.逐次逼近A/D转换器综述[J].微电子学,2007,37(4):523-531. 被引量:18
  • 6RAZAVI B.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智,等译.西安:西安交通大学出版社,2003:309-329.
  • 7Lin Yingzu, Lin Chengwu, Chang S J. A 5 bit 3,2 GS/s flash ADC with a digital offset calibration scheme [ J ]. IEEE Trans- actions on VLSL Systems,201 O, 18 ( 3 ) :509-513.
  • 8Pernillo J,Flynn M P. A 1.5-GS/s flash ADC with 57.7dB SFDR and 6.4 bit ENOB in 90nm digital CMOS [ J]. IEEE Transactions on Circuits and Systems Ⅱ: Express Brief,2011, 58(12) :837-841.
  • 9Texas Instruments. 16- Channel, 24 - Bit analog- to- digital converter[ EB/OL ]. (2009-10-17 ) [ 2012-12-10 ]. http :// www. ti. eom/en/lit/gpn/ads1258.
  • 10Tong Xinyuan, Yang Yintang, Zhu Zhangming, et al. A 10-bit 200-KS/s SAR ADC IP core for aVtouch screen SOC[J]. Journal of Semiconductors,2010,31 (10) : 105009.

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