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一种基于晶体管逻辑状态的电路简化方法 被引量:1

A new method of circuit reduction based on logic state of transistor
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摘要 本文提出了一种存储器(Memory)逻辑参数提取的电路简化新方法。该方法通过判断在输入特定激励向量时晶体管的逻辑状态是否改变来简化电路,研究表明新方法能大幅度减少电路中晶体管的数量,同时能很好地保持电路原有的功能特性和电气特性。基于此方法测得的逻辑参数有较好的精度,并大大加快了提取速度。实验结果表明该方法是有效的。 A new method of circuit reduction for memory logic parameter is proposed. The method simplifies the circuit by judging whether logic state of transistor alters or not while inputting specialized stimulate wave. The studies show it reduces the number of the transistor greatly and holds nicely functional performance and electrical characteristic of circuit. The precision of logic parameter extracted by this new method is very good and it cuts short greatly the extraction time. The experimental results show that it is efficient.
出处 《电路与系统学报》 CSCD 北大核心 2006年第3期80-82,87,共4页 Journal of Circuits and Systems
基金 浙江省科技计划重点项目资助(021107065)
关键词 存储器 逻辑参数 电路简化 memory logic parameter circuit reduction
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参考文献5

  • 1RABAEY J M.Digital integrated circuits:a design perspective[M].Beijing:Tsinghua University Press & Prentice-Hall International,Inc,1996.1-628.
  • 2OGAWA.K,KOHNO.M,KITAMURA F.PASTEL:a parametrized of memory characterization system design[A].PENNY.S,KRISTINE.k.Proceedings of Design,Automation and Test in Europe[C].Los Alamitos:IEEE Computer Society Press,1998.15-20.
  • 3TPILLAGE L,et al.Asymptotic Waveform Evaluation for timing Analysis[J].IEEE Trans,Computer-Aided Design,1990,9:352-366.
  • 4KAO W H,HAMAZAKI R,et al.modeling and circuit reduction methodology for circuit simulation of DRAM circuits[A].ROCHIT.R.IEEE International Workshop on Memory Technology,Design and Testing[C].Los Alamitos:IEEE Computer Society Press,1995.15-20.
  • 5T Hirose,et al.A 20-ns 4-Mb CMOS SRAM with hierarchical word decoding architecture[J].Solid-State Circuits of IEEE Journal,1990,25:1068-1074.

同被引文献8

  • 1International Technology Roadmap for Semiconductors 2000Edition(ITRS-2005). http://www.itrs.net/Links/2000UpdateFinal/ORTC2000final.pdf . 2001
  • 2VENKATRAMAN R,CASTAGNETTI R,KOBOZEVA Oet al.The design,analysis,and development of highly manufacturability 6T SRAM bitcells for SoC applications. Transactions on Electron Devices . 2005
  • 3SUNDARESWARAN S,ABRAHAM J A,PANDA Ret al.Characterization of Sequential Cells for Constraint Sensitivities. 2009 10th International Symposium on Quality of Electronic Design . 2009
  • 4CHEN T,LOUDERBACK D,SUNADA G.Optimization of the Number of Levels of Hierarchy in Large-scale Hierarchical Memory Systems. Proceedings of the 1992 International Symposium on Circuits and Systems . 1992
  • 5Hirose T,Kuriyama H,Murakami S, et al.A 20-ns 4-Mb CMOS SRAM with hierarchical word decoding architecture. IEEE Journal of Solid State Circuits . 1990
  • 6Hiroaki Nambu,Kazuo Kanetani,Kaname Yamasaki,et al.A1.8-ns access,550-MHz,4.5-Mb CMOS SRAM. IEEE Journal of Solid State Circuits . 1998
  • 7MAI K,HO R,ALON Eet al.Architecture and circuit techniques for a 1.1-GHz 16-kb reconfigurable memory in 0.18-μm CMOS. IEEE Journal of Solid State Circuits . 2005
  • 8Amrutue B S,Horowitz M A.Fast Low-Power decoder for RAM’s. IEEE Journal of Solid State Circuits . 2001

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