摘要
The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition （MOCVD）. The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal-semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.
The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition （MOCVD）. The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal-semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.
