摘要
分子束外延工艺广泛地应用到微电子器件的研究和制作，分子束外延过程中杂质的扩散问题可归结为活动边界的杂质扩散问题，研究该类问题时，常需求解第二类弱奇性Ｖｏｌｔｅｒｒａ积分方程。本文运用正、反Ｌａｐｈｃｅ变换和幂级数展开的方法，首次给出了该类含有卷积核的弱奇性Ｖｏｌｔｅｒｒａ积分方程的级数解，并探讨了级数解的适用范围。
The molecular-beam-epitaxy (MBE) technique is employed currently in the investigation and fabrication of the microelectronic devices. The problem of foreign substance proliferation in the process of MilE is a problem of foreign substance proliferation with moving boundary. It needs to know the solution of the second type of week singular Volterra integral equation as often as to study this problem. In this paper, the Laplace transform and inverse Laplace transform and the power series expansion are used to give the series solution of the week singularity Volterra integral equation with a faltung kernel for the first time, and the scope of suitability of the series solution is discussed.
