摘要
In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.
In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.
基金
Supported by National Natural Science Foundation of China. (No. 60576052) and The Key Program Project of National Science Foundation of China. (No. 60436030)
