等离子体辅助电子枪蒸发制备AlN薄膜及等离子体参数诊断

PREPARED AlN THIN FILMS BY PLASMA ASSISTED ELECTRON BEAM EVAPORATION AND THE DIAGNOSIS OF PLASMA PARAMETERS

采用射频TCP(Transverse coup led p lasm a)等离子体辅助电子枪蒸发技术首次在室温下制备了氮化铝薄膜,用傅立叶变换红外光谱仪分析了氮化铝薄膜红外光谱的特性.利用朗缪尔静电单探针诊断了射频TCP离子束辅助电子枪蒸发镀膜装置反应室内等离子体密度的空间分布规律,并分析了气压对等离子体分布的影响.离子源口等离子体密度较大,但分布不均匀;反应室内等离子体迅速扩散,密度变小,分布趋向于均匀.

Aluminium nitride thin film was prepared at room temperature for the first time by means of TCP plasma assisted electron beam evaporation deposition. Analysis by Fourier transform infrared spectroscopy（ FT- IR） reveals the FTIR characteristic of A1N. The properties of spatial distribution of plasma ion density in RF TCP plasma reaction chamber were diagnosed by a Langmuir probe and the effect of air pressure were investigated. Plasma ion density at the exit of ion fountain is big but with a poor uniformity. Plasma ion diffuses quickly in reaction chamber, the density of it becomes small and the its plasma distribution tends to become uniform.