薄膜晶体管a－Si：H／a－SiN_x界面研究

The Study of a-Si:H/a-SiN_x Interface of TFT

对比ａ－Ｓｉ：Ｈ／ａ－ＳｉＮｘ界面附近ａ－Ｓｉ：Ｈ和体材料ａ－Ｓｉ：Ｈ的光致发光谱（ＰＬ）发现：随着ＳｉＮｘ中ｘ的增大，ＰＬ峰值向低能方向移动，相对发光强度减小。这是因为由于氮含量的增加，界面晶格不匹配加剧，导致悬挂键密度增多和深能级隙态密度增加。该观点得到Ｃ－Ｖ测试结果的证实。

Comparing the photoluminescence spectra of a-St:H near.the a-St:H/SiN. interfaCe with that of the bulk of a-St:H, we found that the photoluminescence spectra of a-Si:H near the interface shifted to the low-energy side, and that its relative luminescence intensity weakened with an increase in nitrogen content of the a-SiN. layer. It is because that the lattice mismatch caused by the increase in nitrogen content of the a--SiN.:H layer leads to the increase of the density of dan'gling bonds and deep-level gap states. The attitude was confirmed by the result of C-V method.