低压MOCVD法生长GaAs／Si单晶膜及膜的特性研究

Growth and Properties of Single Crystalline GaAs Layer Grown on Si Subtrates by LP-MOCVD

本文通过低压ＭＯＣＶＤ方法，采用改进的两步法工艺，即基片表面的高温处理一生长过渡层－退火－外延生长－退火工艺，在向［０１１］方向偏３°的Ｓｉ（１００）衬底上生长了ＧａＡｓ膜，并对外延膜进行了Ｘ射线衍射，喇曼散射和光致发光分析．发现Ｘ射线衍射曲线光滑尖锐，无杂峰，（４００）峰的摇摆曲线很锐，喇曼散射谱中ＴＯ峰与ＬＯ峰的强度比ｌＴＯ／ｌＬＯ很小，光致发光谱的半峰宽只有１２．４ｍｅＶ，说明在Ｓｉ上异质外延的ＧａＡｓ单晶膜具有相当好的质量．

ingle Crystalline GaAs layer is grown on Si by LP-MOCVD,with an improved two-step method,that is, high-temperature surface treatment-growing buffer layer-annealing-epitaxial growth-annealing.X-ray diffraction,Raman scattoring and photoluminescence of GaAs/Si are studied.Only(400)and(200) peaks of GaAs are observed in X-ray diffraction diagrams and the rocking curve of(400)peak is very sharp.Raman spectrum shows that the intensity of TO peak is rather weak compared with the LO intensity. The FWHM of photoluminescence spectrum is less than 13mev.These results indicate that the quality of GaAs epilayer is quite good.