在高于253K温度下的1550nm波长单光子探测实验(英文)

Single Photon Detection at 1550 nm Wavelength at Temperature of Above 253 K

介绍了在高于253 K的温度下,实现红外单光子探测的实验·选用拉通电压较高的雪崩光电二极管(APD) ,设计制作了非线性限流技术保护高温工作的APD,利用半导体热电制冷器,在256 .8K的温度下,实现了1550 nm波段的单光子探测实验·单光子探测的暗记数率为3 .13×10-5ns ,在220 kHz/s的单光子脉冲速率下,探测效率为2 .08 %·

The selected APDs which have higher punch through voltage are used to prove single photon detection at 1550 nm communication wavelengths at temperature of above 253 K. In the experiment, a controllable nonlinear current limiting circuit is used to protect the APD operated in Geiger mode at high temperature. Single photon detection at 1550 nm communication wavelengths, cooled by a thermo-electrical cooler, were experimentally demonstrated at temperature of 257.8 K. Its dark count is 3.13 × 10^-1 ns and single photon detection efficiency is 2.08%. The experimental data indicate that it is possible to realize single photon detection at higher temperature. The APDs operated at the temperature of above 253 K can simplify the cooling device greatly.