摘要
锑化铟既作霍尔元件测量了磁感应强度，又作磁敏电阻研究了其阻值随磁场的变化规律。不仅揭示了霍尔效应和磁阻效应在半导体内同时存在的事实，使产生2种物理现象的微观本质表现得更为突出，而且还消除了由于使用其他方法测量磁感应强度时，被测点与锑化铟所处位置不同而造成的系统误差。
InSb was used as Hall- element to measure magneto induction as well as used as magneto- sensitive to study the variety rule of its resistant when the magneto field was changed. The fact that Hall- effect and thermo- sensitive effect exist at the same time was opened out and the microcosmic essence of producing this two physic phenomena was showed. Moreover, measuring error induced by the measuring position and different locations of InSb was eliminated.
出处
《实验技术与管理》
CAS
2006年第6期21-22,34,共3页
Experimental Technology and Management
基金
山东省自然科学基金资助项目(Y2003A01)
关键词
磁阻效应
磁敏电阻
霍尔效应
霍尔元件
磁感应强度
magneto-resistant effect
magneto- sensitive resistant
Hall- effect
Hall element
magneto induction
