硅各向异性腐蚀模拟的3-D连续CA模型研究

Study on 3-D Continuous Cellular Automata Model for Silicon Anisotropic Etching Simulation

针对硅的各向异性腐蚀,直接采用硅的晶格结构作为CA(元胞自动机)的晶格结构,建立了硅各向异性腐蚀的3 D连续CA模型。模型通过引入更多腐蚀过程中出现的晶面,使得腐蚀过程中表层元胞边界条件的确定只与表层元胞有关,提高了模拟的精度。通过对模似结果的理论分析及将模拟的三维输出结果与已有实验结果进行对比,验证了模型的模拟效果。

A 3-D continuous CA model is implemented for silicon anisotropic etching based on the silicon crystal structure. More planes are incorporated into the model by combining 2-D CA Model with 3-D CA model and the boundary conditions of the top-surface cells are decided only by using cells on the top-surface, so the accuracy of the model is increased. The effectiveness of the simulation results was confirmed by using the available experimental result and theoretic analysis.