Co/Cu/Co结构中纳米氮化物界面掺杂研究

Inverse magnetoresistance caused by nano-nitride-layer(NNL) doping at the inner interfaces of Co/Cu/Co:experiment and theory

研究了纳米氮化物(NNL)界面掺杂对Co/Cu/Co磁电阻的影响.当NNL在下界面(Co/Cu)掺杂时,得到了反常磁电阻为-0.043%;当NNL在上界面(Cu/Co)掺杂时,磁电阻近似为0;当NNL同时在上、下界面掺杂时,得到的反常磁电阻为-0.005%.运用Camley-Barnas的玻尔兹曼半经典理论模型,通过调整界面参数计算其磁电阻,发现改变界面自旋相关散射系数能对实验结果给出合理解释,证明了NNL掺杂确实能改变界面自旋相关散射系数.

The effects of nano- nitride layer （NNL） doped at the interfaces of Co/Cu/Co on magnetoresistance （RM） are investigated experimentally and theoretically. When the NNL is doped at the bottom interface （Cu/Co）,the RM（ -0. 043%） is inverse compared to that of the control sample. When the NNL is doped at the top interface （Co/Cu）, the RM is nearly zero. When the NNL is doped at both the bottom and top interfaces, the RM （ -0. 005 % ） is also inverse. On the other hand, the Camley - Barnas model of semi - classicalBoltzmann transport theory is used to calculate the RM of the doped system. The inverse RM can be attained by adjusting the interface parameters which represent the interface spin - dependent scattering. The calculated results confirm that the interface spin - dependent scattering can be changed by the NNL doping.