摘要
系统地介绍了近几年来国内外对ＳｉＧｅ量子阱及短周期超晶格光发射的研究现状．由于Ｓｉ，Ｇｅ材料及器件在微电子学领域内的无可比拟的优越性，所以，超过 ９０％的芯片技术是Ｓｉ基的，然而，由于Ｓｉ，Ｇｅ是间接带隙，载流子跃迁几率小，其光电应用受到很大的限制，为此，人们作出了不懈的努力。
An overview is presented of the present status of Si/Ge quantum wells and superlat- tices. More than 90 percent of chips are Si-based because of their incomparable superiority in the field of micro^electronics. However, due to their indirect band-gap, the probability of translation of the car- riers is very low, which limits their optoelectronic applications. Much has been done, and great im- provement has been achieved.
出处
《物理》
CAS
北大核心
1996年第6期369-374,共6页
Physics
关键词
光致荧光
硅
电致荧光
锗
量子阱
超晶格
photoluminescence, electroluminescence, quantum well, superlattice, surface seg- regation, surfactant, molecular beam epitaxy
