摘要
本文报道了4.2～300K 温度范围的富含 Si 的 Si_(1-x)Ge_x 合金的晶格振动红外透射光谱.实验首次观察到 Ge 杂质诱发的一个新的共振模吸收.结果还表明,直拉法生长的Si_(1-x)Ge_x 合金存在严重的氧沾污,且氧的振动峰随温度的降低向高频方向移动.
In this paper,the infrared transmittance spectra of Si_(1-x)Ge_xalloys from 4.2K to 300K are presented.A new resonance absorption caused by Ge impurities was observed.The results also show that there are a lot of oxygen in Si_(1-x)Ge_x alloys grown by Gzochralshi.
出处
《光子学报》
EI
CAS
CSCD
1996年第4期315-317,共3页
Acta Photonica Sinica
关键词
硅锗合金
红外透射光谱
共振模
Si_(1-x)Ge_x
Infrared transmittance spectrum
Resonance mode
