MOCVD激光诱导选择原子层外延(LALE)生长室的研究

RESEARCH OF MOCVD LASER-ASSISTED ELECT ATOMIC LAYER EPITAXY REACTOR

本文对 MOCVD 激光诱导选择原子层外延进行了研究,设计并制作了一种激光诱导原子层外延生长室结构,该系统能实现低温 MOCVD 生产,可形成稳定的层流,易于生长均匀的外延层,通过激光诱导可实现选择性的原子层外延.

MOCVD laser-assisted elect atomic layer epitaxy is studied in this paper.A kind of construction of the reactor for laser-assissed atomic layer epitaxy is designed and fabricated.MOCVD epitaxy layer with uniform and lower temperature can be performed.Elect atomic layer epitaxy with laser-assisted can be realized.