摘要
本文论述了相移掩模(PSM)提高光刻分辨率的基本原理、主要类型、无铬 PSM 的制作方法,简述了曝光实验和实验结果.用 NA=0.28的 g 线光刻机得到了0.5μm的实际分辨率.
In the paper,we describe the basic principles and primary types of phase shift masks (PSM)used for increasing resolution.Manufacturing methods of chromeless PSM are presented. Exposure experiment and experimental results are given.Practical resolution 0.5 m has been gained with g line(436nm)10x reduction stepper of NA 0.28.
出处
《光子学报》
EI
CAS
CSCD
1996年第4期328-332,共5页
Acta Photonica Sinica
基金
国家自然科学基金
关键词
相移掩膜
无铬
光刻技术
大规模集成电路
Phase-shifting mask
Chromeless phase-shifting mask
Photolithography
