多孔硅中的1．54μm光发射

1.54μm EMISSION FROM POROUS SILICON

本文报道了利用离子注入技术制备多孔硅中Ｅｒ^（３＋）的１．５４μｍ光发射发光材料的实验，并对样品的低温光致发光特性进行了实验研究。实验表明多孔硅中的Ｅｒ^（３＋）发光与单晶硅中的Ｅｒ^（３＋）发光（同样注入条件，退火工艺制备）相比，发光强度有成数量级的提高，同时发光峰更宽，伴线更丰富．

Er3+ ions are implanted into the surface of porous silicon (PS)visible light emitting. The1.54μm light emitting PS:Er3+ samples are fabericated.The infrared photoluminescence character ofthe PS:Er3+samples at 77K is studied.The experiments prove that the 1.54μm light emission fromthe PS:Er3+samples are much more efficient than the 1.54μm emission from the Si:Er3+ samples(ofthe same Er3+ implanting dose,energy and the same annealing process),and the full widths at halfmaximum(FWHM)of the 1.54μm peak of the emission from the PS:Er3+ samples are broader thanthose from the Si :Er3+samples. There are also more companion peaks of the Er3+emission appearingin the PL spectra(near the main peak)of the PS:Er3+samples than those of the Si:Er3+samples.