Ni^＋注入n—GaP DLTS谱中Ni杂质能级的识别

DISCERNMENT ON THE Ni IMPURITY LEVEL IN DLTS SPECTRA OF Ni￣+-IMPLANTED n-GaP

在不同条件下退火的Ｎｉ＋注入ｎ－ＧａＰＤＬＴＳ谱中观测到表观激活能在０．６０～０．７０ｅＶ范围内的多个多子峰和少子峰．对各样品掺杂层内的能带弯曲及Ｎｉ杂质各荷电状态浓度空间分布在ＤＬＴＳ测量的零偏－反偏过程中的变化进行了计算．结合分析实测各能级热发射率数据，对其中起源于ＮｉＧａ中心的ＤＬＴＳ峰作出了判断．

Several majority and minority peaks with apparent activation energy within a range of 0.6￣0.7 eV appeared on the DLTS spectra of Ni+-implanted n-GaP annealed at different conditions.The band-bendings and space profilling changes of the concentrations of NiG.impurity in its different charge states within the doping layers during the zero-reverse bias process have been calculated for the samples.Combining an analysis of the thermal emission rate data of the levels,a discernment on which, among the DLTS peaks observed experimentally,could be caused by Nic. center has been made.