在Al_2O_3衬底上GaN的APMOCVD生长

GROWTH OF GaN BY APMOCVD ON Al_2O_3

在Ａｌ_２Ｏ_３衬底上ＧａＮ的ＡＰＭＯＣＶＤ生长缪国庆，元金山，朱景义，李玉琴，洪春荣（中国科学院长春物理研究所，长春１３００２１）含氮回一Ｖ族化合物（包括ＧａＮ、ＡＩＮ、ＩｎＮ和ＧａＡＩＮ）是直接带隙半导体材料，它们的禁带宽度可以从１．９ｅＶ到６．２...

GaN has been grown on(0001) Al2O3 substrates by APMOCVD.Carrier concetration of GaN is 2.3×1019cm-3.Hall mobility of GaN is 320 cm2/V·s.The minimum FWHM of (0001) peak of double crystal X-ray diffraction is 12'.The photoluminescennce of GaN has been observed.