近红外光学带隙硅三维光子晶体的制备

Preparation of the Three-dimensional Silicon Photonic Crystal with a Photonic Band Gap Near Infrared

用溶剂蒸发法将单分散SiO2微球组装成三维有序结构的胶体晶体模板,用低压化学气相沉积法填充高折射率材料硅,酸洗去除SiO2模板,获得了硅反蛋白石三维光子晶体。通过扫描电镜、X射线衍射仪和紫外-可见-近红外光谱仪对硅反蛋白石三维光子晶体的形貌、成分、结构和光学性能进行了表征。研究结果表明:Si在SiO2微球空隙内具有较高的结晶质量,填充致密均匀;通过控制沉积条件,可控制硅的填充率;制备的硅反蛋白三维光子晶体在近红外区(1.4μm左右)具有明显的光学反射峰,表现出光学带隙效应,测试的光学性能与理论计算基本吻合。

Monodisperse silica microspheres are assembled into three-dimensional colloidal crystal template with long-ranged order by using solvent vaporization method. Low pressure chemical vapour deposition is then used to fill the voids of silica colloidal crystals template with high refractive index material silicon, then silica colloidal crystals template is removed by an acid etching. Thus silicon three-dimensional inverse opal photonic crystal is obtained. The modality, component, structure and optic capability of the resulted samples are characterized by scanning electron microscopy, X-ray diffraction and UV-VIS-NIR spectroscopy. Results show that silicon of high crystalline quality is homogeneously distributed inside the voids of silica template. The infiltration of silicon can be controlled by controlling the conditions of LPCVD. The samples have optic reflective apex near infrared（about 1.4btm）and show the photonic band gap effects. The experiment optic capability is inosculated with the calculated one.