基于VHDL-AMS的结型场效应管行为建模与仿真

Behavioral Modeling and Simulation of Junction FET Based on VHDL-AMS

提出一种基于SPICE模型半导体器件的VHDL-AMS行为建模方法,给出了结型场效应管模型中温度效应、噪声、直流和电容方程的行为模型,最后以N沟道结型场效应管共源极放大电路为例在混合信号仿真器SMASH5.5中验证了模型的正确性。

This paper presented a VHDL-AMS behavioral modeling method for the senliconductor devices based on Spice model, and also provided the behavioral model of large signal model of JEFT, including modeling tor temperature effects, noise, DC current and capacitance equations. Finally, an N channel JFET common source emitter amplifier circuit was taking as example and used in the mixed signal simulator SMASH5.5, which verifies the behavioral model.