摘要
通过求解泊松方程,综合考虑短沟道效应和漏致势垒降低效应,建立了小尺寸S iG e沟道pM O SFET阈值电压模型,模拟结果和实验数据吻合良好。模拟分析表明,当S iG e沟道长度小于200 nm时,阈值电压受沟道长度、G e组份、衬底掺杂浓度、盖帽层厚度、栅氧化层厚度的影响较大。而对于500 nm以上的沟道长度,可忽略短沟道效应和漏致势垒降低效应对阈值电压的影响。
An analytical model on threshold voltage of SiGe channel pMOSFET is developeu by solving Poisson＇s equation. Short channel effect （SCE） and drain induced barrier lower （DIBL） are taken into account in the model. Simulated results show satisfactory agreement with experiment data. Simulated results also show ： channel length,Ge content, substrate doping concentration,cap layer thickness and gate oxide thickness affect threshold voltage intensively while channel length less than 200 nm. SCE and DIBL may be ignorable while channel length is more than 500 nm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第2期148-151,156,共5页
Research & Progress of SSE
基金
国家自然科学基金资助(6057602160376019)
