高可靠高亮度AlGaInP发光二极管

Highly Reliability and Brightness AlGaInP Light-emitting Diodes

分析了隧道再生双有源区A lG aInP发光二极管的工作原理,测试了不同注入电流下管芯的轴向光强,得到了轴向光强随注入电流的变化关系。20 mA注入电流条件下,发射峰值波长为620 nm的隧道再生双有源区A lG aInP发光二极管,透明封装成视角15°后平均轴向光强达到5.5 cd。对透明封装成15°隧道再生双有源区发光二极管进行了寿命实验,在温度为25°C、30 mA直流电流条件下,隧道再生双有源区A lG aInP发光二极管的寿命超过了1.2×105h。

The operating principal of tunneling-regenerated-double-active-region （TRDAR） AlGaInP light-emitting diodes is analyzed on-axis luminous intensity is tested under different injected current and the relationship between on-axis luminous intensity and injected current is offeted in this paper. The emitting peak wavelength of TRDAR AIGalnP light-emitting diodes is 620 nm at 20 mA. The average on-axis luminous intensity of TRDAR AlGaInP light-emitting diodes lamps with 15° viewing angle is 5.5 cd. Its life test is carried, and the lifetime of TRDAR AlGaInP light-emitting diodes has exceeded 1.2 × 10^5 hours under conditions of 30 mA direct current and 25℃ ambient temperature.