摘要
介绍了一种半导体照明光源恒流驱动芯片的设计。该芯片采用0.6μm CM O S标准工艺制造,包含有大功率M O SFET、带隙基准源电路、输出缓冲电路和取样反馈控制电路几个主要功能模块,在标准工艺线上实现了功率器件与控制电路的单片集成。该芯片可为工作电压为3.5 V,工作电流为350 mA的单个半导体照明光源提供恒定的驱动电流。在5 V电源电压有10%跳变的情况下,半导体照明光源的驱动电流的变化可被控制在1.71%以内,而距离光源10 cm处的照度变化仅为1.28%。当环境温度由25°C升高至85°C时,半导体照明光源的驱动电流减小1.14%,而距离光源10 cm处的照度仅减小1.09%。该恒流驱动芯片的电源效率可达63.4%。
A chip which drives a semiconductor light with a constant current of 350 mA is designed and fabricated in 0. 6 μm standard CMOS process. The chip consists of a power MOSFET, a bandgap reference, sample-feedback control circuits and output buffers. It makes possible the compatible integration of power device with conventional CMOS signal processing circuits. The chip aims at driving a semiconductor light working under 3. 5V DC voltage and 350mA DC current,with constant current despite of changes in voltage supply or temperature. The variance of the driving current and illuminance of the semiconductor light at a distance 10 cm from it can be controlled within the range of 1.71% and 1.28% respectively when voltage supply changes by 10%. When ambient temperature varies from 25℃ to 85℃, they can be controlled within the range of 1.14% and 1.09% respectively. The efficiency of the driver can reach up to 63.4%.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第2期238-241,共4页
Research & Progress of SSE
基金
浙江省教育厅科研项目(编号20051006)
浙江大学微电子所--杭州高特联合研发中心科研项目
