摘要
文章主要讨论在相同工艺条件下,针对不同栅氧厚度(例如:Tox分别为150A、200A、 250A)的NMOSFET进行加速应力试验,在试验中当某些参数的漂移量达到失效判据规定的值时(例如:阈值电压改变50mV),可以得到器件的应力寿命,由此估计该器件在正常工作条件下的寿命值, 并对该工艺的热载流子注入效应进行评价。
For different NMOSFET with different gate oxide thickness,we did accelerate stressing experiment. We can get the stress time which a particular parameter has changed from its unstressed value （ eg： the threshold voltage changed by 50mV ）, and estimate the lifetime of these devices at normal working conditions and evaluate this process＇ hot carrier effect exactly.
出处
《电子与封装》
2006年第6期37-39,共3页
Electronics & Packaging
关键词
热载流子效应
栅氧厚度
寿命
Hot Carrier Effect
Thickness of Gate Oxide
Lifetime
