摘要
用脉冲激光沉积法(PLD)分别在Si(100),SiO2/Si(100),LaA lO3衬底上制备了La0.5Sr0.5CoO3薄膜.在LaA lO3衬底上实现了La0.5Sr0.5CoO3薄膜的近外延生长,薄膜的电阻率最低.这是由于LaA lO3的晶格常数与La0.5Sr0.5CoO3最为接近.在SiO2/Si(100)衬底上生长的La0.5Sr0.5CoO3薄膜的电阻较Si(100)衬底上薄膜小,XRD表明SiO2/Si(100)衬底更易于薄膜的择优生长.
La0.5Sr0.5CoO3 thin film are prepared by pulsed laser deposition （PLD）on Si（100）、SiO2/Si（100） and LaAlO3 substrates separately. Experiments show that the resistance of the thin film on LaAlO3 substrate is lowest. And the films are grown on LaAlO3 substrates with high quality because of the closeness of the lattice parameter of LaAlO3 and La0.5Sr0.5CoO3 thin film. The resistance of the thin film on SiO2/Si（100） substrate is lower than that on Si（100） substrate, and XRD shows the SiO2/Si（100） substrate is favorable to the preferential growth of the thin film..
出处
《昆明理工大学学报（理工版）》
2006年第3期12-14,18,共4页
Journal of Kunming University of Science and Technology(Natural Science Edition)
基金
云南省教育厅科学研究基金(项目编号:5Y0663D)
