摘要
通过对全桥逆变电路工作过程的分析,认为高频变压器中的漏感、吸收回路中的电感,以及续流二极管在IGBT关断瞬间不能及时导通续流是绝缘栅双极型晶体管IGBT电压产生浪涌的根本原因;指出在保护电路中选取适当的电阻和电容值,减小变压器漏感,降低吸收回路电感是控制IGBT电压浪涌的有效方法;最后给出的实验验证了所提方法的正确性.
The working process of the bridge inverter main circuit is analyzed in the paper. The voltage surge of IGBT （Insulated Gate Bipolar Transistor） is caused by the leakage of high frequency transformer, the inductance of absorption circuit, and that FWD （Freewheeling Diodes） can be delayed when IGBT switches off. The proper value of resistance and capacitance of absorption circuit, little leakage of high frequency transformer, and the less inductance of absorption circuit are the effective solutions in suppressing the voltage surge of IGBT.
出处
《河海大学常州分校学报》
2006年第2期57-60,共4页
Journal of Hohai University Changzhou
