电子束和离子注入处理鸡冠花种子对当代(M_o)植株生长发育影响的初步研究

Plant growth of E-beam irradiated or ion implanted seeds of ornamental Celosia

利用电子束和氮离子、氢离子注入处理普通鸡冠花干种子,试验结果表明,两种诱变处理均能显著抑制鸡冠花植株的生长、发育,并能有效地诱发花性状变异,变异株率可达0.5%—2%。电子束处理鸡冠花干种子的半致死剂量(LD50)经测定为1.2kGy左右;离子注入处理的半致死剂量随注入离子种类不同而不同,N+注入的半致死剂量(LD50)为1.6×1017/cm2,H+注入的半致死剂量应低于1.6×1016/cm2。鸡冠花干种子电子束处理的适宜剂量为1.5kGy左右,离子注入处理的适宜方法是N+1.6×1016/cm2。同时鸡冠花对高剂量辐照较不敏感,是一种耐强辐照的资源。

Celosia seeds were irradiated by 3MeV electron beams or implanted with 30keV N^＋ or H^＋ ions, The results showed that the two kinds of treatments could inhibit growth and development of the plants and induce variation of the flower. The variation rate was between 0.5%-2%. LD50 of the seeds irradiation by the E-beams was estimated at about 1.2kGy. LD50 of the seed ion implantation varied with the ion. LD50 of H^＋ ion implantation was 1.6×10^17 ions/cm^2, and LD50 of N^＋ ion implantation was less than 1.6×10^16 ions /cm^2. Suitable treatments of the seeds were 1.5kGy E-beam irradiation, or implantation of 1.6×10^16 N^＋/cm^2. The seeds were not sensitive to higher dose irradiation or ion implantation. And it seems that Celosia seeds have strong radiation resistance.