摘要
研究了微量元素铋对Sr0.5Ba0.5-xBixTiO3薄膜介电性能的影响。当X分别为0～0．030mol时，相对介电常数εr、介质损耗tanδ逐渐降低，最大介电常数温度点Tm（居里温度点）逐渐移向低温；在所测试频率范围内，εr、tanδ均能表现出较好的频散特性；当铋掺量为0．015mol时，薄膜的Pr为0．22μC/cm^2、Ps为0．32℃／cm^2、Ec为60kV／cm。采用XRD、FTIR、TEM等测试方法分析了薄膜的结构特征。薄膜的矿物组成为四方钙钛矿结构，但[TiO6]八面体特征吸收峰（471．65cm^-1）移向低波数，晶粒粒径减小。
The influences of bismuth （Bi） on the dielectric properties of Sr0.5Ba0.5-xBixTiO3 （ BST, 0≤ X≤0.030mol） thin films were studied by the dielectric constant （εr） and hysteresis. The results showed that dielectric constant （εr）, dielectric loss （tanδ） was decreased respectively, and the temperature Tm for maximum εr （ Curie temperature） moved to lower temperature with the amount of Bi increase. The Pr, Ps and Ec was 0. 22μC/cm^2 ,0. 32μC/cm^2 and 60kV/cm respectively for Sr0. 5Ba0.485Bi0.015TiO3 thin film at 100Hz, 20V. The microstructure of BST thin films was studied by XRD, FFIR, TEM. Tetragonal perovskit crystal grains existed in SBT thin films, but the grain size was decreased with the increasing doping ration in BST. The characteristic absorption band for octahedron [TiO6] （ 471.65cm^-1 ） was shifted to lower wave number.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2006年第3期62-67,共6页
Bulletin of the Chinese Ceramic Society
基金
济南大学博士科研启动金(b0518).
关键词
BST薄膜
介电常数
介质损耗
Bi施主掺杂
结构特征
BST thin films
dielectric constant
dielectric loss
Bi dopant
characteristic microstructure
