期刊文献+

固结磨料抛光垫作用下的材料去除速率模型 被引量:6

A model of material removal rate with fixed abrasive pad
下载PDF
导出
摘要 在对研磨抛光过程作出适当简化的基础上,推导出了固结磨料研具研磨抛光工件的去除速率模型,并进行了数值模拟。结果表明:固结磨料研磨加工时的去除速率不仅与工件的材质有关,还与固结磨料研磨盘的结构与加工参数相关;去除速率与相对速度V成正比,与压力的3/2次方成正比,与磨料直径成反比,并随着凸起间距的增加而下降。 A model based on appropriate simplification was developed for describing material removal rate with fixed abrasive pad during wafer polishing, and a numerical simulation of material removal rate was conducted. The results showed that the material removal rate is related to material of parts, structure of pad and machining parameters. It is proportional to relative velocity between pad and parts and is inverse to the diameter of the abrasive grits. The dependence of applied pressure is found to be nonlinear. The material removal rate decreases with the increase of the distance between asperities.
出处 《金刚石与磨料磨具工程》 CAS 北大核心 2006年第3期38-41,45,共5页 Diamond & Abrasives Engineering
关键词 固结磨料 抛光 去除速率 模型 fixed abrasive polishing removal rate model
  • 相关文献

参考文献10

  • 1Kline & Co., Little Falls. CMP: Market Trends and Technology[J],Solid State Technology,2000,43 (6) :67
  • 2CMP Slurry, A Wild Ride Ahead [J]. Solid Slate Technology, 2000(12) :72
  • 3Martin Kulawski. Polishing of Ground Silicon Wafer with Fixed Abrasive Pad[ C], 9^th CMP User Meeting, Neuss, Germany, 2002,10
  • 4蔡明莳.浅沟渠元件隔离技术现状与挑战[J].奈米通讯,2001,10(2):43-43.
  • 5Korczynski Ed. Future of CMP to be Revolutionary, not Evolutionary[ J ]. Semi - conductor Manufacturing,3 (7) ,2002
  • 6Gagliardi J J, T. Vo, STI Polishing with 3M' s Fixed Abrasive[ C]. 16^th International VLSI Multilevel Interconnection Conf. Santa Clara, CA, 1999,9:223
  • 7Brain Lee et al. A Fixed Abrasive CMP Model[ C], Proc. of CMP-MIC.Santa Clara, CA, P395, 2001,3
  • 8Gagliardi J et al. Fixed Abrasives and Selective Chemistries: Some Real Advantages for Direct STI CMP [ J ]. Proc. of CMP-MIC, Santa Clara,2002,3:274
  • 9Romer A et al. STI CMP Using Fixed Abrasive: Demand, Measurement Methods and Results[C]. Proc. of CMP-MIC, Santa Clara, 2000,3 :265
  • 10http ://www. gnptech. com

同被引文献70

引证文献6

二级引证文献39

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部