摘要
The photodissociation of cis-(NO)2 in N2 and Ar matrices under 266 nm pulsed laser irradiation is reported- Results show the electronically excited o(1D) atom may be formed in the primary photolysis step. In the N2 matrix, the highly active o(1D) atoms could either react with N2 lattice molecules forming N2O or recombine with nearby N2O forming cis-(NO)2 and trans-(NO)2. However, in the Ar matrix the nascent state o(1D) atom, due to the lack of reactant, quenches to O(3P) as moving through the lattice site and the yield of N2O is less than that in N2 matrix.
The photodissociation of cis-(NO)2 in N2 and Ar matrices under 266 nm pulsed laser irradiation is reported- Results show the electronically excited o(1D) atom may be formed in the primary photolysis step. In the N2 matrix, the highly active o(1D) atoms could either react with N2 lattice molecules forming N2O or recombine with nearby N2O forming cis-(NO)2 and trans-(NO)2. However, in the Ar matrix the nascent state o(1D) atom, due to the lack of reactant, quenches to O(3P) as moving through the lattice site and the yield of N2O is less than that in N2 matrix.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1996年第8期673-676,共4页
Acta Physico-Chimica Sinica
基金
国家自然科学基金
