摘要
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAsDFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA.
基金
国家自然科学基金资助项目(批准号:10374085)~~
