体硅LDMOS漂移区杂质分段线性注入模型研究(英文)

Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

提出了体硅LDMOS漂移区杂质浓度分布的一种二维理论模型,根据该模型,如果要使带有场极板的LD MOS得到最佳的性能,那么LDMOS漂移区的杂质浓度必须呈分段线性分布.用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58.8%和降低87.4%.

A novel 2D analytical model for the doping profile of the bulk silicon RESURF LDMOS drift region is proposed. According to the proposed model, to obtain good performance, the doping profile in the total drift region of a RESURF LDMOS with a field plate should be piecewise linearly graded. The breakdown voltage of the proposed RESURF LDMOS with a piecewise linearly graded doping drift region is improved by 58. 8%, and the specific on-resistance is reduced by 87. 4% compared with conventional LDMOS. These results are verified by the two-dimensional process simulator Tsuprem-4 and the device simulator Medici.