基于亲水表面处理的GaAs/GaN晶片直接键合

GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment

对晶片进行亲水表面处理,在氮气保护下500℃热处理10min,成功实现GaAs与GaN晶片的直接键合,键合质量较好.扫描电子显微镜观测结果表明,键合界面没有空洞.光致发光谱观测结果表明,键合工艺对晶体内部结构的影响很小.可见光透射谱测试结果表明,键合界面具有良好的透光特性.GaAs与GaN晶片直接键合的成功,为实现GaAs和GaN材料的集成提供了实验依据.

GaAs and GaN wafer pairs are successfully bonded based on the hydrophilic surface treatment. The bonding is carried out at 500℃ in N2 atmosphere for 10min. It is found that a large fraction of the interface area is well bonded. SEM results indicate that there is no air gap at the bonding interface. PL measurements indicate that the crystal structure is slightly affected by the wafer bonding process. Visible light transmission measurements indicate that the GaAs/GaN bonded interface is translucent. Success in GaAs/GaN direct wafer bonding has great implications for the integration of GaAs and GaN semiconductor materials.