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局域寿命控制NPT-IGBT瞬态模型 被引量：3

A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control
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摘要 提出了局域寿命控制下NPT IGBT的瞬态模型,并与数值分析结果进行了对比,验证了模型的正确性.该模型采用了准静态近似,将关断过程分为快速下降阶段和缓慢下降阶段分别加以求解而得到.基于该模型,详细讨论了局域低寿命区参数对关断时间的影响.该模型将有助于理解局域寿命控制NPT IGBT的关断过程物理图像,同时也可以用于指导该类器件的设计和优化.文中所采用的分析方法具有一定的普适性,其他类似结构和器件亦可采用此方法进行分析. A novel dynamic-state model of an NPT-IGBT with localized lifetime control is proposed and is verified by the 2D simulator MEDICI. In this model, the quasi-static-state approximation is used, and the turn-off stage is divided into two stages, including a fast turn-off and a slow turn-off, to characterize the turn-off. With this model,the dynamic characteristics of a localized lifetime control NPT-IGBT, as influenced by the parameters of the localized low-lifetime region, are discussed in detail. This model is helpful for understanding the physical mechanisms in an NPT-IGBT with localized lifetime control during the turn-off period and can be used to the direct design and optimization of an NPT-IGBT. The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices.
作者 方健 吴超 乔明 张波 李肇基
机构地区 电子科技大学微电子与固体电子学院
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第6期1078-1083,共6页 半导体学报（英文版）
基金 国家军事电子预研(批准号:41308020405) 武器装备预研基金(批准号:51408030404DZ0215)资助项目~~
关键词 局域寿命控制 NPT-IGBT 关断时间 电导调制 localized lifetime control NPT-IGBT turn-off time conductivity modulation
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献9

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二级参考文献11

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共引文献2

同被引文献45

  • 1孟进,马伟明,张磊,赵治华.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20):16-20. 被引量：51
  • 2蔡慧,赵荣祥,陈辉明,汪世平.倍频式IGBT高频感应加热电源的研究[J].中国电机工程学报,2006,26(2):154-158. 被引量：30
  • 3梅杨,孙凯,黄立培.基于逆阻式IGBT的三相/单相矩阵式变换器[J].电工技术学报,2007,22(3):91-95. 被引量：15
  • 4Tang Yong, Chen Ming, Wang Bo. New methods for extracting field-stop IGBT model parameters by electrical measurements[C]//IEEE International Symposium on IndustrialElectronics. Korea: IEEE, 2009: 1546-1551.
  • 5Tang Yong, Chen Ming, Wang Bo. An improved method for IGBT base excess carrier lifetime extraction[C]// Applied Superconductivity and Electromagnetic Devices. Chendu, China: IEEE, 2009: 206-210.
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引证文献3

二级引证文献41

Journal of Semiconductors
2006年 第6期

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