摘要
给出了一种基于功率PHEMT工艺技术设计加工完成的紧凑型K波段单级反馈式MMIC宽带功率放大器.在21～28GHz的工作频段内,当漏极电压为6V,栅电压为-0.25V,电流为82mA时,1dB压缩点输出功率大于21dBm,小信号增益为7dB左右,输入驻波比小于3,输出驻波比均小于2.芯片尺寸为1mm×1.2mm×0.1mm.同时,给出了一种芯片级电磁场仿真验证方法,用该方法仿真的结果和测试结果非常一致,保证了电路设计的准确性.
This paper describes a compact K-band single stage MMIC broad-band power amplifier （PA）. The PA is fabricated in an advanced 0. 25μm power PHEMT process. At 21～28GHz, the PA has a 21dBm P1dB （1dB gain compression point） output power when Vd = 6V, Vg = - 0. 25V,and Ids = 82mA. It also has a small signal gain of 7dB. VSWRs are below 3 and 2,respectively, for the input and output ports. The chip dimensions are 1mm × 1.2mm × 0.1mm. In addition,we give a full layout EM simulation solution,which agrees well with the measurement.
基金
上海市科委基金(批准号:045115021)
上海市新泰基金资助项目~~
