摘要
The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700℃ 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance-voltage measurements, and the self-conslstent solution of Schrodinger＇s and Poisson＇s equations, it is found that after 700℃ 30-rain thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas （2DEG） electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.
The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700℃ 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance-voltage measurements, and the self-conslstent solution of Schrodinger＇s and Poisson＇s equations, it is found that after 700℃ 30-rain thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas （2DEG） electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.
