一种分子基电双稳器件

A Molecular-based Electrical Bistable Device

报道一种可逆转换的分子基电双稳薄膜器件，Al／BN4/Al／BN4/Al．其中功能层为有机／金属/有机的夹层结构，而中间金属层要非常薄．该器件在较低电压作用时呈现高阻状态，阻值在10^6～10^9Ω；而当电压超过某一阈值时，器件导电态发生改变，由高阻态跃迁为低阻态，阻值约为10^2～10^5Ω．两种状态的电阻值比为10^3～10^5．另外，还比较了不同功能层厚度器件的性能．

It is reported a kind of molecular-hased electrical bistable device Al/BN4/Al/BN4/Al, where a thin metal layer is embedded within the organic material as the active medium. The device exhibits a high-resistance state（ 10^6-10^9 Ω） under a lower voltage, whereas it retains a low-resistance state（10^2-10^5 Ω） upon a higher voltage. The resistance ratio of the two states is about 10^3-10^5. Furthermore, the situations of different depth of the active medium have also been compared.