射频磁控反应溅射制备Al_2O_3薄膜的工艺研究

PROCESSES STUDY ON Al_2O_3 THIN FILMS BY RF MAGNETRON REACTIVE SPUTTERING

采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝A(l2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究。结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低。X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状。

Al2O3 thin films are successfully deposited by RF magnetron reactive sputtering method on stainlesssteel and silicon wafer substrates. The aluminum is the target and oxygen is the reactive gas. The deposition rate,structure and surface morphology of aluminum oxide thin f＇dms are studied. The results show that the deposition rate firsdy increases linearly,then slighdy decreases with the increase of sputtering power. The deposition rate decreases with increasing the distance between target and substrate. With increasing sputtering pressure, the deposition rate increases firsdy,then decreases after reaching a maximum. There is a sharp decrease in the deposition rate when the target is changed from metallic to oxide sputtering with the increase of oxygen partial pressure. X-ray diffraction of the deposited films shows that all the f＇dms are amorphous in room temperature. The AFM surface morphology shows that the microstructure of the aluminum oxide thin films deposited is column.