论带缓冲器的CMOS与非门电路

The Discussion on the CMOS' NAND Gate with a Buffer Attached

论述了CMOS与非门存在的三个缺点:输出电阻Ro受输入端状态的影响,输出的高、低电平受输入端数目的影响,输入端工作状态不同时对电压传输特性的影响．讲清楚了带缓冲器的CMOS与非门是怎样克服、解决这三个缺点的,克服、解决这三个缺点是输出端的缓冲器起的作用,每个输入端的缓冲器是用于得到所需与非门逻辑功能的．

The article states three disadvantages existing in the CMOS＇ NAND gate, the output resistance Ro is influenced by the condition of the input terminal; the output high or low frequency is influenced by the quantities of the input terminal; the attribute of voltage transmit is influenced by the working conditions of the input terminal. The article presents clearly how CMOS＇ NAND gate deals with these three disadvantages. The buffer of the output terminal functions as the key to overcome these three disadvantages, and the buffer of each input terminal functions as a component that is used to get logical connections with NAND gate.