摘要
为了进一步提高传感器的灵敏度,提出了利用GaAs半导体材料来突破硅的极限,阐明了GaAs材料的优越特性和发展GaAs基MEMS的必要性。概述了GaAs微机械加工的刻蚀技术、体微机械加工技术和表面微机械加工技术的特点,对相应的GaAs微机械加工工艺进行了举例分析,并介绍了国内首次制作的GaAs基MEMS微结构,为GaAsMEMS的进一步发展奠定了基础。
In order to improve the sensitivity of sensors, GaAs is used to break through the limit of silicon sensors. The necessity of GaAs-based MEMS is clarified. And the characteristics of etching technology, bulk micro-machining, surface micro machining and hybrid micro machining are summarized. The fabricating process of GaAs-based microstructure were analyzed. The GaAs-based microstructure which was first made in china is introduced, it will promote the development of GaAs MEMS.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第7期481-484,共4页
Semiconductor Technology
基金
国家自然基金(50405025
50375050)
山西省归国留学基金资助项目