晶体中光电子涨落的影响因素

Influencing Factor of Photoelectron Fluctuate in Crystals

针对晶体中光电子涨落的特点,分析了光吸收激发和热激发中影响光电子产生的因素。在光电子的衰减阶段,不同的电子陷阱所起的作用不同,浅电子陷阱由于延长了光电子在导带的弛豫时间,使光电子的衰减变缓;而深电子陷阱由于对光电子形成强束缚或作为复合中心加速了光电子的衰减。

Based on the photoelectron character, the factor effecting on the creation of photoelectron was analyzed in light absorption excitation and thermal excitation. The effect of different electron traps was different at electron decay in crystals. The shallow electron traps made the electron decay slowly because that ~they prolonged the relaxation time of electron in conduction band. The deep electron traps accelerated the electron decay because of the strong bonding or deep electron trap as recombination center.