直流电弧等离子喷射CVD中控制生长(111)晶面占优的金刚石膜

Controlling Fabrication of(111)Crystal Surface Dominating Diamond Film by DC ARC Plasma Jet CVD

运用光发射谱(OES)技术对大功率直流电弧等离子喷射CVD金刚石膜的气相沉积环境进行了原位诊断,研究了气相环境中主要含碳基团的浓度及分布与沉积参数的关系,发现了C2基元比其他基元对沉积参数更加敏感。利用光发射谱对C2基元发射强度的监测,实时调控沉积各参数,在大功率直流电弧等离子喷射CVD中实现了(111)晶面占优的金刚石膜的可控生长,I(111)/I(220)XRD衍射峰强度的比值达48。

Gas atmosphere was characterized in-situ by optical emission spectra （OES） technique in the high power DC arc plasma jet CVD diamond film system. Density and distribution of the carboncontaining radicals were studied in this kind of depositing environment. The experiments showed that C2 was more sensitive to the deposition parameters than other radicals. Controlling fabrication of （111 ） crystal surface dominating diamond films was performed by detecting C2 with OES technique in high power DC arc plasma jet CVD. XRD intensity ratio of （ 111 ） and （220） in the best film arrived at 48.