水热法KTP晶体生长与宏观缺陷研究

Study on the Growth and Defects of Hydrothermal KTP Crystal

本文报道了水热法KTP晶体的生长工艺及晶体生长形态,系统研究了水热法KTP晶体的宏观缺陷,其宏观缺陷主要为添晶、生长脊线、裂隙和包裹体。提出了晶体生长工艺的改进措施,如提高原材料和试剂的纯度、调整籽晶的悬挂方式、减少籽晶的尺寸等,都可以减少晶体的宏观缺陷,提高晶体的质量。//(011)切向的籽晶生长的晶体质量较高,且能很好地应用于激光器件中。

The growth procedure and crystal form of hydrothermal KTP are reported in this article. Some defects in the hydrothermally grown KTP crystal were researched. The macroscopic defects of hydrothermal KTP crystal are mainly twin and coalescence crystal, growth spine, cracks and inclusions. The causes were also discussed. Some suggestions on improving the techniques of the crystal growth of KTP crystal are given at the end of this article to improve the quality of the grown crystals, such as promoting the purity of materials and reagents, minimizing the dimensions of seed crystals and choosing the hang direction of seed crystals, and so on. Parallel to （011） seed crystals can grow pure KTP crystals, and these crystals have a high efficient in the laser device.