掺三氟乙酸TGS晶体生长及其性能研究

Study on Growth and Properties of Trifluoroacetic Acid Doped TGS Crystals

本文以三氟乙酸作为掺质,分别按4.4mol%、9.4mol%、13.4mol%、18.4mol%的配比进行了掺质TGS晶体生长,并对其作X射线粉末衍射分析及晶体热释电性能的测试。结果表明,三氟乙酸的掺入虽然使热释电性能有一定程度下降,但却使得晶体铁电-顺电相转变延迟,提高了晶体的居里点,并产生了一定的内偏压场。

Trifluoroacetic acid doped TGS crystals were grown from the aqueous solution with different dopant concentrations by slow-cooling method. The X-ray powder diffraction and the main pyroelectric parameters of the crystals were measured. The results show that the transition between the ferroelectric phase and the paraelectric phase is postponed, the Curie point of TFTGS single crystals is improved and inner bias voltage field is produced by doping trifluoroacetic acid although the pyroelectric properties of the crystals may be decreased to some degree.