铜离子注入对半导体BaTiO_3陶瓷PTCR特性的影响

Effect of Cu-Ion Implantation on PTCR Behaviours of Semiconducting Barium Titanate Ceramics

应用阻抗谱，结合阻温特性测量分析铜离子注入（１１０ＫｅＶ，６×１０１５和１×１０１７ｉｏｎｓ／ｃｍ２）半导体ＢａＴｉＯ３陶瓷的ＰＴＣＲ特性。结果表明，注入剂量较低时，可以提高材料的ＰＴＣＲ效应。认为注入的铜离子以Ｃｕ２＋和Ｃｕ＋同时存在于ＢａＴｉＯ３材料晶界处并发生电子转移，起着电子陷阱作用。

Semiconducting Ba TiO3 ceramics were implanted with 110KeV Cu-ions to doses of 6.0×10￣(15)and 1.0×10￣(17)inos/cm￣2.Ion-implantation-induced modifications f PTCR behaviour of the ceramics were studied using the ac complex impedance method and the resistance vs temperature measurement.The results show that relatively low dose must be used to increase the magnitude of the PTCR effect in these ceramics. This may suggest that the implanted Cu-ions are in two charge states of Cu￣(2+) and Cu￣+,which exist in the grain boundaries,and that the electron,transfer reaction between Cu￣(2+) and Cu￣(1+) may occur.These Cu-ions introduce the effect to chargetrapping phenomenon in the ceramics.