摘要
介绍了具有一维纳米结构的碳化硅(SiC)如SiC纳米棒、纳米线、纳米管、纳米带的制备方法,着重介绍了碳纳米管模板生长法、碳还原法、激光烧蚀法、电弧放电法、流动催化剂法和热解有机前驱体法以及它们的生长机理,并对这几种方法的优缺点进行了分析,指出了目前研究一维纳米SiC中存在的问题和未来发展方向。
In this paper, the preparation methods for one-dimensional SiC nanostructures such as nanorods, nanowires, nanotubes and nanobelts are reviewed, emphasizing on the carbon nanotubes template-assisted growth (or the carbon nanotubes-confined reaction method), the reduction method, the laser ablation synthesis, the arc-discharge approach, the floating catalyst method and pyrolysis of organic precursor. Their advantages and disadvantages are analyzed. The current problems and the development trend of the research on one-dimensional SiC nanomaterials are also pointed out.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第F05期106-108,共3页
Materials Reports
基金
国家自然科学基金(50371062)
教育部优秀青年教师资助计划
关键词
一维纳米结构
碳化硅
制备
生长机理
one-dimensional nanostructures, SiC, preparation, growth mechanism